Invention Grant
- Patent Title: Integrated circuit device with crenellated metal trace layout
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Application No.: US16348105Application Date: 2016-12-07
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Publication No.: US11139241B2Publication Date: 2021-10-05
- Inventor: Patrick Morrow , Mauro J. Kobrinsky , Mark T. Bohr , Tahir Ghani , Rishabh Mehandru , Ranjith Kumar
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP
- International Application: PCT/US2016/065423 WO 20161207
- International Announcement: WO2018/106233 WO 20180614
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L27/02 ; H01L21/306 ; H01L21/8234 ; H01L27/088 ; H01L29/08 ; H01L29/10 ; H01L29/40 ; H01L29/66 ; H01L29/78 ; H01L21/768 ; H01L29/417 ; H01L29/772 ; H01L23/522 ; G06F30/392 ; G06F30/394

Abstract:
Integrated circuit (IC) cell architectures including a crenellated interconnect trace layout. A crenellated trace layout may be employed where an IC cell includes transistor having a source/drain terminal interconnected through a back-side (3D) routing scheme that reduces front-side routing density for a given transistor footprint. In the crenellated layout, adjacent interconnect traces or tracks may have their ends staggered according to a crenellation phase for the cell. Crenellated tracks may intersect one cell boundary with adjacent tracks intersecting an opposite cell boundary. Track ends may be offset by at least the width of an underlying orthogonal interconnect trace. Crenellated track ends may be offset by the width of an underlying orthogonal interconnect trace and half a spacing between adjacent orthogonal interconnect traces.
Public/Granted literature
- US20190312023A1 INTEGRATED CIRCUIT DEVICE WITH CRENELLATED METAL TRACE LAYOUT Public/Granted day:2019-10-10
Information query
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