Invention Grant
- Patent Title: Alignment mark structure and method of fabricating the same
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Application No.: US16786919Application Date: 2020-02-10
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Publication No.: US11145602B2Publication Date: 2021-10-12
- Inventor: Kun-Ju Li , Jhih-Yuan Chen , Hsin-Jung Liu , Chau-Chung Hou , Yu-Lung Shih , Ang Chan , Fu-Chun Hsiao , Ji-Min Lin , Chun-Han Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L27/22 ; H01L43/12 ; H01L43/02 ; H01L43/08 ; H01L43/10

Abstract:
An alignment mark structure includes a dielectric layer. A trench is embedded in the dielectric layer. An alignment mark fills up the trench, wherein the alignment mark includes a metal layer covering the trench. A first material layer covers and contacts the metal layer. A second material layer covers and contacts the first material layer. A third material layer covers and contacts the second material layer. The first material layer, the second material layer, and the third material layer independently includes silicon nitride, silicon oxide, tantalum-containing material, aluminum-containing material, titanium-containing material, or a low-k dielectric having a dielectric constant smaller than 2.7, and a reflectance of the first material layer is larger than a reflectance of the second material layer, the reflectance of the second material layer is larger than a reflectance of the third material layer.
Public/Granted literature
- US20210249357A1 ALIGNMENT MARK STRUCTURE AND METHOD OF FABRICATING THE SAME Public/Granted day:2021-08-12
Information query
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