Invention Grant
- Patent Title: Conductive structures and redistribution circuit structures
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Application No.: US16852569Application Date: 2020-04-20
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Publication No.: US11152273B2Publication Date: 2021-10-19
- Inventor: Shang-Yun Tu , Ching-Wen Hsiao , Sheng-Yu Wu , Ching-Hui Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/31 ; H01L23/00 ; H01L25/00 ; H01L21/56 ; H01L21/768 ; H01L21/78 ; H01L23/498 ; H01L21/683 ; H01L25/10 ; H01L25/065

Abstract:
Conductive structures and the redistribution circuit structures are disclosed. One of the conductive structures includes a first conductive layer and a second conductive layer. The first conductive layer is disposed in a lower portion of a dielectric layer, and the first conductive layer includes an upper surface with a protrusion at an edge. The second conductive layer is disposed in an upper portion of the dielectric layer and electrically connected to the first conductive layer. An upper surface of the second conductive layer is conformal with the upper surface of the first conductive layer.
Public/Granted literature
- US20200243410A1 CONDUCTIVE STRUCTURES AND REDISTRIBUTION CIRCUIT STRUCTURES Public/Granted day:2020-07-30
Information query
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