Invention Grant
- Patent Title: Fin field effect transistor (FinFET) device structure
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Application No.: US15348652Application Date: 2016-11-10
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Publication No.: US11152362B2Publication Date: 2021-10-19
- Inventor: Chun-Chieh Wang , Zheng-Yang Pan , Yi-Min Huang , Shih-Chieh Chang , Tsung-Lin Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/06 ; H01L29/165 ; H01L29/423 ; H01L29/78 ; H01L21/8238 ; H01L29/66
Abstract:
A fin field effect transistor (FinFET) device structure and method for forming the same are provided. The FinFET device structure includes a fin structure extending above a substrate, and the fin structure has a first portion and a second portion below the first portion, and the first portion and the second portion are made of different materials. The FinFET device structure includes an isolation structure formed on the substrate, and an interface between the first portion and the second portion of the fin structure is above a top surface of the isolation structure. The FinFET device structure includes a liner layer formed on sidewalls of the second portion of the fin structure.
Public/Granted literature
- US20180130802A1 FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE Public/Granted day:2018-05-10
Information query
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