Invention Grant
- Patent Title: Magnetic memory device
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Application No.: US16867138Application Date: 2020-05-05
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Publication No.: US11152561B2Publication Date: 2021-10-19
- Inventor: Bae-Seong Kwon , Yongjae Kim , Kyungtae Nam , Kuhoon Chung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2019-0068895 20190611
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/12 ; H01L27/22

Abstract:
A magnetic memory device includes a lower contact plug on a substrate, a magnetic tunnel junction pattern on the lower contact plug, a bottom electrode, which is between the lower contact plug and the magnetic tunnel junction pattern and is in contact with a bottom surface of the magnetic tunnel junction pattern, and a top electrode on a top surface of the magnetic tunnel junction pattern. Each of the bottom electrode, the magnetic tunnel junction pattern, and the top electrode has a thickness in a first direction, which is perpendicular to a top surface of the substrate. A first thickness of the bottom electrode is about 0.6 to 1.1 times a second thickness of the magnetic tunnel junction pattern.
Information query
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