中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

7 records (took 0.015 seconds)

    Magnetic memory device
    2.
    发明授权
    Magnetic memory device 有权

    公开(公告)号：US12058941B2

    公开(公告)日：2024-08-06

    申请号：US17083943

    申请日：2020-10-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yongjae Kim ,  Kuhoon Chung ,  Gwanhyeob Koh ,  Bae-Seong Kwon ,  Kyungtae Nam

    IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01

    CPC classification number: H10N50/80 ,  H10B61/20 ,  H10N50/01

    Abstract: A magnetic memory device includes a lower contact plug on a substrate and a data storage structure on the lower contact plug. The data storage structure includes a bottom electrode, a magnetic tunnel junction pattern, and a top electrode that are sequentially stacked on the lower contact plug. The lower contact plug and the data storage structure have a first thickness and a second thickness, respectively, in a first direction perpendicular to a top surface of the substrate. The first thickness of the lower contact plug is about 2.0 to 3.6 times the second thickness of the data storage structure.

    MAGNETIC MEMORY DEVICE
    3.
    发明公开
    MAGNETIC MEMORY DEVICE 审中-公开

    公开(公告)号：US20240349621A1

    公开(公告)日：2024-10-17

    申请号：US18752866

    申请日：2024-06-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yongjae Kim ,  Kuhoon Chung ,  Gwanhyeob Koh ,  Bae-Seong Kwon ,  Kyungtae Nam

    IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01

    CPC classification number: H10N50/80 ,  H10B61/20 ,  H10N50/01

    Abstract: A magnetic memory device includes a lower contact plug on a substrate and a data storage structure on the lower contact plug. The data storage structure includes a bottom electrode, a magnetic tunnel junction pattern, and a top electrode that are sequentially stacked on the lower contact plug. The lower contact plug and the data storage structure have a first thickness and a second thickness, respectively, in a first direction perpendicular to a top surface of the substrate. The first thickness of the lower contact plug is about 2.0 to 3.6 times the second thickness of the data storage structure.

    Magnetic memory device
    4.
    发明授权
    Magnetic memory device 有权

    公开(公告)号：US11152561B2

    公开(公告)日：2021-10-19

    申请号：US16867138

    申请日：2020-05-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Bae-Seong Kwon ,  Yongjae Kim ,  Kyungtae Nam ,  Kuhoon Chung

    IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22

    Abstract: A magnetic memory device includes a lower contact plug on a substrate, a magnetic tunnel junction pattern on the lower contact plug, a bottom electrode, which is between the lower contact plug and the magnetic tunnel junction pattern and is in contact with a bottom surface of the magnetic tunnel junction pattern, and a top electrode on a top surface of the magnetic tunnel junction pattern. Each of the bottom electrode, the magnetic tunnel junction pattern, and the top electrode has a thickness in a first direction, which is perpendicular to a top surface of the substrate. A first thickness of the bottom electrode is about 0.6 to 1.1 times a second thickness of the magnetic tunnel junction pattern.

    MAGNETIC MEMORY DEVICE
    5.
    发明申请
    MAGNETIC MEMORY DEVICE 有权

    公开(公告)号：US20210242396A1

    公开(公告)日：2021-08-05

    申请号：US17083943

    申请日：2020-10-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yongjae Kim ,  Kuhoon Chung ,  Gwanhyeob Koh ,  Bae-Seong Kwon ,  Kyungtae Nam

    IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

    Abstract: A magnetic memory device includes a lower contact plug on a substrate and a data storage structure on the lower contact plug. The data storage structure includes a bottom electrode, a magnetic tunnel junction pattern, and a top electrode that are sequentially stacked on the lower contact plug. The lower contact plug and the data storage structure have a first thickness and a second thickness, respectively, in a first direction perpendicular to a top surface of the substrate. The first thickness of the lower contact plug is about 2.0 to 3.6 times the second thickness of the data storage structure.

    Method of fabricating semiconductor device
    6.
    发明授权
    Method of fabricating semiconductor device 有权

    公开(公告)号：US10573806B1

    公开(公告)日：2020-02-25

    申请号：US16392046

    申请日：2019-04-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyungtae Nam ,  Seung Pil Ko ,  Woojin Kim ,  Hyunchul Shin ,  Youngsoo Choi

    IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16 ,  H01L43/02

    Abstract: A method of fabricating a semiconductor device includes forming a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a tunnel barrier layer interposed between the first and second magnetic layers, patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern, forming an insulating layer to cover the magnetic tunnel junction pattern, and performing a thermal treatment process to crystallize at least a portion of the first and second magnetic layers. The thermal treatment process may include performing a first thermal treatment process at a first temperature, after the forming of the magnetic tunnel junction layer, and performing a second thermal treatment process at a second temperature, which is higher than or equal to the first temperature, after the forming of the insulating layer.

Patent Agency Ranking