公开(公告)号：US20210242396A1

公开(公告)日：2021-08-05

申请号：US17083943

申请日：2020-10-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongjae Kim ,  Kuhoon Chung ,  Gwanhyeob Koh ,  Bae-Seong Kwon ,  Kyungtae Nam

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

Abstract: A magnetic memory device includes a lower contact plug on a substrate and a data storage structure on the lower contact plug. The data storage structure includes a bottom electrode, a magnetic tunnel junction pattern, and a top electrode that are sequentially stacked on the lower contact plug. The lower contact plug and the data storage structure have a first thickness and a second thickness, respectively, in a first direction perpendicular to a top surface of the substrate. The first thickness of the lower contact plug is about 2.0 to 3.6 times the second thickness of the data storage structure.

公开(公告)号：US20240349621A1

公开(公告)日：2024-10-17

申请号：US18752866

申请日：2024-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongjae Kim ,  Kuhoon Chung ,  Gwanhyeob Koh ,  Bae-Seong Kwon ,  Kyungtae Nam

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01

CPC classification number: H10N50/80 ,  H10B61/20 ,  H10N50/01

Abstract: A magnetic memory device includes a lower contact plug on a substrate and a data storage structure on the lower contact plug. The data storage structure includes a bottom electrode, a magnetic tunnel junction pattern, and a top electrode that are sequentially stacked on the lower contact plug. The lower contact plug and the data storage structure have a first thickness and a second thickness, respectively, in a first direction perpendicular to a top surface of the substrate. The first thickness of the lower contact plug is about 2.0 to 3.6 times the second thickness of the data storage structure.

公开(公告)号：US11152561B2

公开(公告)日：2021-10-19

申请号：US16867138

申请日：2020-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bae-Seong Kwon ,  Yongjae Kim ,  Kyungtae Nam ,  Kuhoon Chung

IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22

Abstract: A magnetic memory device includes a lower contact plug on a substrate, a magnetic tunnel junction pattern on the lower contact plug, a bottom electrode, which is between the lower contact plug and the magnetic tunnel junction pattern and is in contact with a bottom surface of the magnetic tunnel junction pattern, and a top electrode on a top surface of the magnetic tunnel junction pattern. Each of the bottom electrode, the magnetic tunnel junction pattern, and the top electrode has a thickness in a first direction, which is perpendicular to a top surface of the substrate. A first thickness of the bottom electrode is about 0.6 to 1.1 times a second thickness of the magnetic tunnel junction pattern.

公开(公告)号：US12058941B2

公开(公告)日：2024-08-06

申请号：US17083943

申请日：2020-10-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongjae Kim ,  Kuhoon Chung ,  Gwanhyeob Koh ,  Bae-Seong Kwon ,  Kyungtae Nam

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01

CPC classification number: H10N50/80 ,  H10B61/20 ,  H10N50/01

Abstract: A magnetic memory device includes a lower contact plug on a substrate and a data storage structure on the lower contact plug. The data storage structure includes a bottom electrode, a magnetic tunnel junction pattern, and a top electrode that are sequentially stacked on the lower contact plug. The lower contact plug and the data storage structure have a first thickness and a second thickness, respectively, in a first direction perpendicular to a top surface of the substrate. The first thickness of the lower contact plug is about 2.0 to 3.6 times the second thickness of the data storage structure.