Invention Grant
- Patent Title: LDMOS component, manufacturing method therefor, and electronic device
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Application No.: US16644856Application Date: 2018-08-03
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Publication No.: US11158737B2Publication Date: 2021-10-26
- Inventor: Huajun Jin , Guipeng Sun , Hongfeng Jin
- Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.
- Applicant Address: CN Jiangsu
- Assignee: CSMC TECHNOLOGIES FAB2 CO., LTD.
- Current Assignee: CSMC TECHNOLOGIES FAB2 CO., LTD.
- Current Assignee Address: CN Jiangsu
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: CN201710660988.8 20170804
- International Application: PCT/CN2018/098447 WO 20180803
- International Announcement: WO2019/024906 WO 20190207
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
Provided in the present invention are an LDMOS component, a manufacturing method therefor, and an electronic device, comprising: a semiconductor substrate (100); a drift area (101) provided in the semiconductor substrate; a gate electrode structure (103) provided on a part of the surface of the semiconductor substrate and covers a part of the surface of the drift area; a source electrode (1052) and a drain electrode (1051) respectively provided in the semiconductor substrate on either side of the gate electrode structure, where the drain electrode is provided in the drift area and is separated from the gate electrode structure; a metal silicide barrier layer (106) covering the surface of at least a part of the semiconductor substrate between the gate electrode structure and the drain electrode; and a first contact hole (1081) provided on the surface of at least a part of the metal silicide barrier layer.
Public/Granted literature
- US20200220010A1 LDMOS COMPONENT, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE Public/Granted day:2020-07-09
Information query
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