Invention Grant
- Patent Title: Nanocrystalline graphene and method of forming nanocrystalline graphene
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Application No.: US16183146Application Date: 2018-11-07
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Publication No.: US11180373B2Publication Date: 2021-11-23
- Inventor: Hyunjae Song , Keunwook Shin , Hyeonjin Shin , Changseok Lee , Changhyun Kim , Kyungeun Byun , Seungwon Lee , Eunkyu Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2017-0161833 20171129,KR10-2018-0094620 20180813
- Main IPC: H01L23/00
- IPC: H01L23/00 ; C01B32/186 ; H01L23/532 ; H01L21/285 ; H01L21/768 ; C23C16/26 ; C23C16/50 ; H01L27/24 ; C01B32/182 ; B82Y30/00 ; B82Y40/00
Abstract:
Provided are nanocrystalline graphene and a method of forming the nanocrystalline graphene through a plasma enhanced chemical vapor deposition process. The nanocrystalline graphene may have a ratio of carbon having an sp2 bonding structure to total carbon within the range of about 50% to 99%. In addition, the nanocrystalline graphene may include crystals having a size of about 0.5 nm to about 100 nm.
Public/Granted literature
- US20190161351A1 NANOCRYSTALLINE GRAPHENE AND METHOD OF FORMING NANOCRYSTALLINE GRAPHENE Public/Granted day:2019-05-30
Information query
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