- 专利标题: Low-noise high efficiency bias generation circuits and method
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申请号: US16744027申请日: 2020-01-15
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公开(公告)号: US11188106B2公开(公告)日: 2021-11-30
- 发明人: Tae Youn Kim , Robert Mark Englekirk
- 申请人: pSemi Corporation
- 申请人地址: US CA San Diego
- 专利权人: pSemi Corporation
- 当前专利权人: pSemi Corporation
- 当前专利权人地址: US CA San Diego
- 代理机构: Jaquez Land Greenhaus & McFarland LLP
- 代理商 Alessandro Steinfl, Esq.
- 主分类号: G05F1/56
- IPC分类号: G05F1/56 ; H03F1/30 ; G05F1/46
摘要:
An apparatus for generating a steady state positive voltage (PVS) signal and a steady state negative voltage (NVS) signal is presented. The apparatus includes a bias signal generation module for generating a steady state reference voltage signal (RVS) based on a varying supply voltage signal (VDD), the RVS having a voltage level less than the PVS. The apparatus further includes a positive signal generation module (PSGM) generating the PVS, the PSGM including a first capacitor, the PSGM employing the first capacitor to generate a portion of the PVS based on the RVS. The apparatus further includes a negative signal generation module (NSGM) generating the NVS, the NSGM including a second capacitor, the NSGM employing the second capacitor to generate a portion of the NVS based on the RVS.
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