Invention Grant
- Patent Title: Ion implantation method, ion implantation apparatus and semiconductor device
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Application No.: US16112178Application Date: 2018-08-24
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Publication No.: US11195695B2Publication Date: 2021-12-07
- Inventor: Moriz Jelinek , Michael Brugger , Hans-Joachim Schulze , Werner Schustereder , Peter Zupan
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102017119571.8 20170825
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01L21/265 ; H01J37/302 ; H01J37/304 ; H01L21/04 ; H01L29/08 ; H01L29/16
Abstract:
An ion implantation method includes changing an ion acceleration energy and/or an ion beam current density of an ion beam while effecting a relative movement between a semiconductor substrate and the ion beam impinging on a surface of the semiconductor substrate.
Public/Granted literature
- US20190066977A1 Ion Implantation Method, Ion Implantation Apparatus and Semiconductor Device Public/Granted day:2019-02-28
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