Invention Grant
- Patent Title: IC structure with short channel gate structure having shorter gate height than long channel gate structure
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Application No.: US16804920Application Date: 2020-02-28
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Publication No.: US11195761B2Publication Date: 2021-12-07
- Inventor: Haiting Wang , Hong Yu , Steven J. Bentley
- Applicant: GLOBALFOUNDRIES U.S. INC.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Hoffman Warnick LLC
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8234 ; H01L27/088 ; H01L29/423 ; H01L23/535
Abstract:
An integrated circuit (IC) structure includes a long channel (LC) gate structure over a long channel region, the LC gate structure having a first gate height; and a short channel (SC) gate structure over a short channel region, the SC gate structure having a second gate height. The short channel region is shorter in length than the long channel region. The second gate height of the SC gate structure is no larger than the first gate height of the LC gate structure.
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