Invention Grant
- Patent Title: Low-noise wide dynamic range image sensor
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Application No.: US16547231Application Date: 2019-08-21
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Publication No.: US11195872B2Publication Date: 2021-12-07
- Inventor: Francois Roy , Stephane Hulot , Andrej Suler , Nicolas Virollet
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Seed IP Law Group LLP
- Priority: FR1857634 20180824
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A semiconductor image sensor includes a plurality of pixels. Each pixel of the sensor includes a semiconductor substrate having opposite front and back sides and laterally delimited by a first insulating wall including a first conductive core insulated from the substrate, electron-hole pairs being capable of forming in the substrate due to a back-side illumination. A circuit is configured to maintain, during a first phase in a first operating mode, the first conductive core at a first potential and to maintain, during at least a portion of the first phase in a second operating mode, the first conductive core at a second potential different from the first potential.
Public/Granted literature
- US20200066780A1 LOW-NOISE WIDE DYNAMIC RANGE IMAGE SENSOR Public/Granted day:2020-02-27
Information query
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