公开(公告)号：US11195872B2

公开(公告)日：2021-12-07

申请号：US16547231

申请日：2019-08-21

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Stephane Hulot ,  Andrej Suler ,  Nicolas Virollet

IPC: H01L27/146

Abstract: A semiconductor image sensor includes a plurality of pixels. Each pixel of the sensor includes a semiconductor substrate having opposite front and back sides and laterally delimited by a first insulating wall including a first conductive core insulated from the substrate, electron-hole pairs being capable of forming in the substrate due to a back-side illumination. A circuit is configured to maintain, during a first phase in a first operating mode, the first conductive core at a first potential and to maintain, during at least a portion of the first phase in a second operating mode, the first conductive core at a second potential different from the first potential.

公开(公告)号：US11901381B2

公开(公告)日：2024-02-13

申请号：US16925248

申请日：2020-07-09

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Andrej Suler

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14689

Abstract: The present disclosure concerns an image sensor including a plurality of pixels, each including: a doped photosensitive region of a first conductivity type extending vertically in a semiconductor substrate; a charge collection region more heavily doped with the first conductivity type than the photosensitive region, extending vertically in the substrate from an upper surface of the substrate and being arranged above the photosensitive region; and a vertical stack including a vertical transfer gate and a vertical electric insulation wall, the stack crossing the substrate and being in contact with the charge collection region, the gate being arranged on the upper surface side of the substrate and penetrating into the substrate deeper than the charge collection region.

公开(公告)号：US11695028B2

公开(公告)日：2023-07-04

申请号：US17514953

申请日：2021-10-29

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Stephane Hulot ,  Andrej Suler ,  Nicolas Virollet

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14621 ,  H01L27/14627

Abstract: A semiconductor image sensor includes a plurality of pixels. Each pixel of the sensor includes a semiconductor substrate having opposite front and back sides and laterally delimited by a first insulating wall including a first conductive core insulated from the substrate, electron-hole pairs being capable of forming in the substrate due to a back-side illumination. A circuit is configured to maintain, during a first phase in a first operating mode, the first conductive core at a first potential and to maintain, during at least a portion of the first phase in a second operating mode, the first conductive core at a second potential different from the first potential.

公开(公告)号：US20200066780A1

公开(公告)日：2020-02-27

申请号：US16547231

申请日：2019-08-21

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Stephane Hulot ,  Andrej Suler ,  Nicolas Virollet

IPC: H01L27/146

Abstract: A semiconductor image sensor includes a plurality of pixels. Each pixel of the sensor includes a semiconductor substrate having opposite front and back sides and laterally delimited by a first insulating wall including a first conductive core insulated from the substrate, electron-hole pairs being capable of forming in the substrate due to a back-side illumination. A circuit is configured to maintain, during a first phase in a first operating mode, the first conductive core at a first potential and to maintain, during at least a portion of the first phase in a second operating mode, the first conductive core at a second potential different from the first potential.