A non-volatile memory device includes a memory cell array including a plurality of memory cells, a page buffer circuit, and a control logic circuit. The page buffer circuit includes a plurality of first page buffers and a plurality of second page buffers, each including a sense latch, a data latch, and a cache latch. The sense latch senses data stored in the memory cell array and dumps the sensed data to the data latch, the data latch dumps the data dumped by the sense latch to the cache latch, and the cache latch transmits the data dumped by the data latch to a data I/O circuit. While the cache latch included in at least one of the plurality of first page buffers is performing a data transmit operation, the data latch included in at least one of the plurality of second page buffers performs a data dumping operation.