- 专利标题： Method of manufacturing a magnetorestive random access memeory (MRAM)
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申请号： US16862598申请日： 2020-04-30
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公开(公告)号： US11233193B2公开(公告)日： 2022-01-25
- 发明人: Shinji Yuasa
- 申请人： Japan Science and Technology Agency , National Institute of Advanced Industrial Science and Technology
- 申请人地址： JP Kawaguchi; JP Tokyo
- 专利权人： Japan Science and Technology Agency,National Institute of Advanced Industrial Science and Technology
- 当前专利权人： Japan Science and Technology Agency,National Institute of Advanced Industrial Science and Technology
- 当前专利权人地址： JP Kawaguchi; JP Tokyo
- 代理机构： Xsensus LLP
- 优先权： JP2004-071186 20040312,JP2004-313350 20041020
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/00 ; H01L43/10 ; H01F10/13 ; G11C11/15 ; H01L49/02 ; H01L27/11507 ; B82Y25/00 ; G11C11/16 ; H01L27/22 ; H01L43/08 ; H01L43/12 ; H01F10/32 ; H01L43/02 ; B82Y10/00
摘要：
A method of manufacturing a magnetoresistive random access memory (MRAM). The method includes forming a first CoFeB layer of the MTJ devices, the first CoFeB layer being amorphous and forming a magnesium oxide (MgO) layer of the MTJ devices over the first CoFeB layer. Further, there is a forming of a second CoFeB layer of the MTJ devices, the second CoFeB layer being amorphous over the MgO layer, and annealing the MTJ devices. The first and second CoFeB layers are crystallized by the annealing, and the MgO layer is poly-crystalline in which a (001) crystal plane is preferentially oriented.
公开/授权文献
- US20200259077A1 MAGNETIC TUNNEL JUNCTION DEVICE 公开/授权日：2020-08-13