Invention Grant
- Patent Title: Method of manufacturing semiconductor device and semiconductor device
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Application No.: US16838807Application Date: 2020-04-02
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Publication No.: US11239349B2Publication Date: 2022-02-01
- Inventor: Takaomi Suzuki , Masaki Sakamoto
- Applicant: SUMITOMO HEAVY INDUSTRIES, LTD.
- Applicant Address: JP Tokyo
- Assignee: SUMITOMO HEAVY INDUSTRIES, LTD.
- Current Assignee: SUMITOMO HEAVY INDUSTRIES, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Michael Best & Friedrich LLP
- Priority: JP2014-044494 20140307
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L29/739 ; H01L21/268 ; H01L27/07 ; B23K26/06 ; B23K26/354 ; B23K26/0622 ; H01L29/08 ; H01L29/66 ; H01L21/8249 ; B23K26/08 ; B23K26/00 ; H01L21/324 ; H01L29/06 ; B23K101/40 ; B23K103/00 ; B23K103/16 ; H01L29/10 ; H01L29/861
Abstract:
A first region is formed by injecting a first condition type first dopant into a surface layer portion of an IGBT section of a semiconductor substrate. A second region is formed by injecting a second condition type second dopant into a region of the IGBT section shallower than the first region. An amorphous third region is formed by injecting the first conduction type third dopant into a surface layer portion of a diode section at a concentration higher than that of the second dopant. Thereafter, the IGBT section and the diode section are laser-annealed under conditions in which the third region is partially melted and the first dopant is activated. Subsequently, a surface layer portion which is shallower than the second injection region in the entire region of the IGBT section and the diode section is melted and crystallized by annealing the IGBT section and the diode section.
Public/Granted literature
- US20200235229A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2020-07-23
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