Invention Grant
- Patent Title: Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory
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Application No.: US16953851Application Date: 2020-11-20
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Publication No.: US11250897B2Publication Date: 2022-02-15
- Inventor: Yohei Shiokawa , Tomoyuki Sasaki
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JPJP2017-034758 20170227
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/04 ; H01L43/10 ; H01L21/8239 ; H01L29/82 ; H01L43/08 ; H01L27/105 ; H01L27/22

Abstract:
Provided is a spin current magnetization rotational element, including: a first ferromagnetic metal layer for a magnetization direction to be changed; and a spin-orbit torque wiring which extends in a second direction intersecting a first direction that is a plane-orthogonal direction of the first ferromagnetic metal layer, the first ferromagnetic metal layer being located on one surface of the spin-orbit torque wiring, wherein the spin-orbit torque wiring has a structure in which a spin conduction layer and an interfacial spin generation layer are alternately laminated in the first direction, a number of a plurality of the interfacial spin generation layers is two or more, and at least one of the plurality of the interfacial spin generation layer is made of a compound.
Public/Granted literature
- US20210098040A1 SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY Public/Granted day:2021-04-01
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