- 专利标题： Semiconductor device
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申请号： US16802315申请日： 2020-02-26
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公开(公告)号： US11251293B2公开(公告)日： 2022-02-15
- 发明人: Yosuke Kajiwara , Hiroshi Ono , Jumpei Tajima , Toshiki Hikosaka , Shinya Nunoue , Masahiko Kuraguchi
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： JP Minato-ku
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JPJP2019-159474 20190902
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/20 ; H01L29/205 ; H01L29/207 ; H01L29/423 ; H01L29/36 ; H01L29/51 ; H01L29/417 ; H01L29/06
摘要：
According to one embodiment, a semiconductor device includes first to fourth semiconductor regions, and an insulating part. The third electrode is between the first and second electrodes in a first direction from the first electrode toward the second electrode. The first semiconductor region includes Alx1Ga1-x1N and includes first to fifth partial regions. A second direction from the first partial region toward the first electrode crosses the first direction. The second semiconductor region includes Alx2Ga1-x2N and includes sixth and seventh partial regions. The third semiconductor region includes Alx3Ga1-x3N and includes an eighth partial region between the fifth and seventh partial regions. The fourth semiconductor region includes Alx4Ga1-x4N and includes a first portion between the fifth and eighth partial regions. The fourth semiconductor region includes a first element not included the first to third semiconductor regions. The insulating part includes first to third insulating regions.
公开/授权文献
- US20210066486A1 SEMICONDUCTOR DEVICE 公开/授权日：2021-03-04
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