- 专利标题: Reduced dark current photodetector with charge compensated barrier layer
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申请号: US15679487申请日: 2017-08-17
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公开(公告)号: US11264528B2公开(公告)日: 2022-03-01
- 发明人: Shimon Maimon
- 申请人: Shimon Maimon
- 申请人地址: US NY Rochester
- 专利权人: Shimon Maimon
- 当前专利权人: Shimon Maimon
- 当前专利权人地址: US NY Rochester
- 代理机构: Saltamar Innovations
- 代理商 Shalom Wertsberger
- 主分类号: H01L31/18
- IPC分类号: H01L31/18 ; H01L31/0296 ; H01L31/10 ; G01J5/06 ; G01J5/20 ; H01L27/146 ; H01L31/101 ; B82Y20/00 ; H01L31/0352 ; H01L31/0304 ; G01J5/061 ; H01L23/38 ; G01J5/00
摘要:
A photodetector comprising a photoabsorber, comprising a doped semiconductor, a contact layer comprising a doped semiconductor and a barrier layer comprising a charge carrier compensated semiconductor, the barrier layer compensated by doping impurities such that it exhibits a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting a significant band gap in relation to the conduction band of the photo absorbing layer, the barrier layer disposed between the photoabsorber and contact layers. The relationship between the photo absorbing layer and contact layer valence and conduction band energies and the barrier layer conduction and valance band energies is selected to facilitate minority carrier current flow while inhibiting majority carrier current flow between the contact and photo absorbing layers.