Invention Grant
- Patent Title: Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistor
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Application No.: US15957912Application Date: 2018-04-20
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Publication No.: US11270994B2Publication Date: 2022-03-08
- Inventor: Ji-Cheng Chen , Ching-Hwanq Su , Kuan-Ting Liu , Shih-Hang Chiu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/49 ; H01L29/423 ; H01L29/06 ; H01L21/8234 ; H01L21/762 ; H01L29/66 ; H01L21/28 ; H01L21/02 ; H01L21/285 ; H01L29/51 ; H01L21/3105 ; H01L29/78
Abstract:
A gate structure includes a gate dielectric layer, a work function layer, a metal layer, and a barrier layer. The work function layer is on the gate dielectric layer. The metal layer is over the work function layer. The barrier layer is sandwiched between the metal layer and the work function layer. The barrier layer includes silicon or aluminum.
Public/Granted literature
- US20190326281A1 GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR Public/Granted day:2019-10-24
Information query
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