Invention Grant
- Patent Title: Method for manufacturing a semiconductor device and a coating material
-
Application No.: US16732146Application Date: 2019-12-31
-
Publication No.: US11276568B2Publication Date: 2022-03-15
- Inventor: Yu-Ling Chang Chien , Chien-Chih Chen , Chin-Hsiang Lin , Ching-Yu Chang , Yahru Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: C09D125/06
- IPC: C09D125/06 ; C09D125/18 ; C09D133/12 ; H01L21/02 ; H01L21/027 ; H01L21/311 ; C09D125/16 ; H01L21/768 ; H01L21/033
Abstract:
In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.
Information query
IPC分类:
