公开(公告)号：US10529552B2

公开(公告)日：2020-01-07

申请号：US15905501

申请日：2018-02-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Yu-Ling Chang Chien ,  Chien-Chih Chen ,  Chin-Hsiang Lin ,  Ching-Yu Chang ,  Yahru Cheng

IPC分类号： H01L21/02 ,  H01L21/311 ,  C09D125/06 ,  C09D133/12 ,  C09D125/16 ,  H01L21/027 ,  H01L21/768 ,  H01L21/033 ,  C09D125/18

摘要： In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.

公开(公告)号：US11276568B2

公开(公告)日：2022-03-15

申请号：US16732146

申请日：2019-12-31

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Yu-Ling Chang Chien ,  Chien-Chih Chen ,  Chin-Hsiang Lin ,  Ching-Yu Chang ,  Yahru Cheng

IPC分类号： C09D125/06 ,  C09D125/18 ,  C09D133/12 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  C09D125/16 ,  H01L21/768 ,  H01L21/033

摘要： In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.