- 专利标题: Crystallisation of amorphous silicon from a silicon-rich aluminium substrate
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申请号: US16096992申请日: 2017-04-21
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公开(公告)号: US11282978B2公开(公告)日: 2022-03-22
- 发明人: Abdelilah Slaoui , Pierre Bellanger , Alexander Ulyashin , Freddy Syvertsen
- 申请人: CENTRE NATIONAL de la RECHERCHE SCIENTIFIQUE , UNIVERSITÉ de STRASBOURG
- 申请人地址: FR Paris; FR Strasbourg
- 专利权人: CENTRE NATIONAL de la RECHERCHE SCIENTIFIQUE,UNIVERSITÉ de STRASBOURG
- 当前专利权人: CENTRE NATIONAL de la RECHERCHE SCIENTIFIQUE,UNIVERSITÉ de STRASBOURG
- 当前专利权人地址: FR Paris; FR Strasbourg
- 代理机构: Stites & Harbison, PLLC
- 代理商 B. Aaron Schulman, Esq.
- 优先权: FR16053838 20160428
- 国际申请: PCT/FR2017/050951 WO 20170421
- 国际公布: WO2017/187061 WO 20171102
- 主分类号: H01L31/18
- IPC分类号: H01L31/18 ; H01L31/0368 ; H01L31/028 ; H01L31/0392 ; H01L31/0232 ; H01L31/0288 ; H01L31/0747 ; H01L31/0224 ; C30B29/06 ; C30B1/02 ; H01L21/02 ; C23C16/24 ; C23C16/56 ; C23C16/50
摘要:
The invention relates to a method for manufacturing a semiconductor component comprising a thin layer of crystalline silicon on a substrate, comprising the steps of: providing a silicon-rich aluminum substrate (S0), depositing a thin layer of amorphous silicon on the substrate (S1), and applying thermal annealing (S2) to the thin layer of amorphous silicon to obtain a thin layer of crystalline silicon on the substrate.