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公开(公告)号:US11282978B2
公开(公告)日:2022-03-22
申请号:US16096992
申请日:2017-04-21
IPC分类号: H01L31/18 , H01L31/0368 , H01L31/028 , H01L31/0392 , H01L31/0232 , H01L31/0288 , H01L31/0747 , H01L31/0224 , C30B29/06 , C30B1/02 , H01L21/02 , C23C16/24 , C23C16/56 , C23C16/50
摘要: The invention relates to a method for manufacturing a semiconductor component comprising a thin layer of crystalline silicon on a substrate, comprising the steps of: providing a silicon-rich aluminum substrate (S0), depositing a thin layer of amorphous silicon on the substrate (S1), and applying thermal annealing (S2) to the thin layer of amorphous silicon to obtain a thin layer of crystalline silicon on the substrate.