Invention Grant
- Patent Title: Memory system and operating method of the same
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Application No.: US17196183Application Date: 2021-03-09
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Publication No.: US11289150B2Publication Date: 2022-03-29
- Inventor: Youngmin Jo , Taehyo Kim , Daeseok Byeon , Seungwon Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2020-0066674 20200602
- Main IPC: G11C11/40
- IPC: G11C11/40 ; G11C11/4072 ; G11C5/06 ; G11C11/4093 ; G11C11/4099

Abstract:
A memory system is provided. The memory system includes a memory device having a plurality of memory cells; and a memory controller configured to control the memory device to: store write data in first memory cells from among the plurality of memory cells, identify a current charge amount of a first cell string including at least one of the first memory cells and a current charge amount of a second cell string adjacent to the first cell string, and store dummy data in at least one memory cell connected to the first cell string or the second cell string based on the current charge amount of the first cell string and the current charge amount of the second cell string.
Public/Granted literature
- US20210375347A1 MEMORY SYSTEM AND OPERATING METHOD OF THE SAME Public/Granted day:2021-12-02
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