An embodiment non-volatile memory device includes an array of memory cells, coupled to word lines, and a row decoder including a pull-down stage and a pull-up stage, which includes, for each word line: a corresponding control circuit, which generates a corresponding control signal; and a corresponding pull-up switch circuit, which is controlled via the control signal so as to couple/decouple the word line to/from the supply. The control circuit includes: a current mirror, which injects a current into an internal node; and a series circuit, which couples/decouples the corresponding internal node to/from ground, on the basis of selection/deselection of the corresponding word line so as to cause a decrease/increase in a voltage on the corresponding internal node. Each control signal is a function of the voltage on the corresponding internal node.