- 专利标题： P-type dipole for p-FET
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申请号： US17034116申请日： 2020-09-28
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公开(公告)号： US11289579B2公开(公告)日： 2022-03-29
- 发明人: Yongjing Lin , Karla M Bernal Ramos , Shih Chung Chen , Yixiong Yang , Lin Dong , Steven C. H. Hung , Srinivas Gandikota
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Servilla Whitney LLC
- 主分类号： H01L29/40
- IPC分类号： H01L29/40 ; H01L29/51 ; H01L29/78 ; H01L21/02 ; H01L21/28
摘要：
Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).
公开/授权文献
- US20210098581A1 P-Type Dipole For P-FET 公开/授权日：2021-04-01
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