- Patent Title: Method for producing a SiC epitaxial wafer containing a total density of large pit defects and triangular defects of 0.01 defects/cm2 or more and 0.6 defects/cm2 or less
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Application No.: US16325281Application Date: 2017-08-21
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Publication No.: US11293115B2Publication Date: 2022-04-05
- Inventor: Ling Guo , Koji Kamei
- Applicant: SHOWA DENKO K.K.
- Applicant Address: JP Tokyo
- Assignee: SHOWA DENKO K.K.
- Current Assignee: SHOWA DENKO K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JPJP2016-170194 20160831,JP2016-186062 20160923
- International Application: PCT/JP2017/029740 WO 20170821
- International Announcement: WO2018/043171 WO 20180308
- Main IPC: C30B25/18
- IPC: C30B25/18 ; C30B29/36 ; C30B25/20 ; C23C16/32 ; G01N21/95 ; G06T7/00 ; H01L29/16 ; H01L21/02 ; H01L21/66 ; H01L29/32
Abstract:
A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H-SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 2.5 inclusions/cm2, wherein a total density of large pit defects and triangular defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.6 defects/cm2 or less.
Public/Granted literature
- US20190177876A1 SiC EPITAXIAL WAFER, PRODUCTION METHOD THEREFOR, AND DEFECT IDENTIFICATION METHOD Public/Granted day:2019-06-13
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