公开(公告)号：US10985042B2

公开(公告)日：2021-04-20

申请号：US16599645

申请日：2019-10-11

Applicant: SHOWA DENKO K.K.

Inventor： Yoshitaka Nishihara ,  Koji Kamei

IPC: H01L21/02 ,  H01L21/67 ,  C30B29/06 ,  C30B29/36

Abstract: A SiC substrate includes a first principal surface, a second principal surface disposed on a side opposite to the first principal surface, and an outer periphery connected to the first principal surface and the second principal surface, wherein a density of composite defects present at a peripheral edge portion of the SiC substrate, in which a hollow portion and a dislocation line extending from the hollow portion are connected to each other is equal to or greater than 0.01 pieces/cm2 and equal to or less than 10 pieces/cm2.

公开(公告)号：US11705329B2

公开(公告)日：2023-07-18

申请号：US16620088

申请日：2018-05-14

Applicant: SHOWA DENKO K.K.

Inventor： Koji Kamei

IPC: H01L21/02 ,  C23C16/32 ,  C30B25/20 ,  C30B29/36 ,  H01L29/04 ,  H01L29/16 ,  H01L29/34 ,  C01B32/956 ,  C01B32/90

CPC classification number: H01L21/02529 ,  C01B32/956 ,  C23C16/325 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02428 ,  H01L21/02634 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/34 ,  C01B32/90

Abstract: According to the present invention, there is provided a SiC epitaxial wafer including: a 4H-SiC single crystal substrate which has a surface with an off angle with respect to a c-plane as a main surface and a bevel part on a peripheral part; and a SiC epitaxial layer having a film thickness of 20 μm or more, which is formed on the 4H-SiC single crystal substrate, in which a density of an interface dislocation extending from an outer peripheral edge of the SiC epitaxial layer is 10 lines/cm or less.

公开(公告)号：US10955350B2

公开(公告)日：2021-03-23

申请号：US16471370

申请日：2017-12-07

Applicant: SHOWA DENKO K.K.

Inventor： Koji Kamei

IPC: C30B25/04 ,  G01N21/64 ,  C30B29/06 ,  C30B29/36 ,  G01N21/95 ,  G01N21/956 ,  H01L21/02 ,  H01L21/67

Abstract: A SiC wafer defect measuring method which includes a device management step of managing a defect measuring device by irradiating a reference sample made of a material having a light-emitting intensity that does not change with repeated irradiation by excitation light and which has a pattern made of recesses and/or protrusions in the surface, the irradiation by the excitation light being performed before measuring defects in a SiC wafer and under the same irradiation conditions as the measurement of the defects in the SiC wafer, and then measuring the S/N ratio of the pattern from a reflection image of the pattern.

公开(公告)号：US20220223482A1

公开(公告)日：2022-07-14

申请号：US17707743

申请日：2022-03-29

Applicant: SHOWA DENKO K.K.

Inventor： Yoshitaka Nishihara ,  Koji Kamei

IPC: H01L21/66 ,  C30B29/00 ,  G01N21/64 ,  G01N21/95 ,  H01L21/02

Abstract: A SiC epitaxial wafer including a high-concentration epitaxial layer having an impurity concentration of 1×1018 cm−3 or more, and the number or positions of basal plane dislocations included in the high-concentration epitaxial layer have been identified

公开(公告)号：US11315839B2

公开(公告)日：2022-04-26

申请号：US16207396

申请日：2018-12-03

Applicant: SHOWA DENKO K.K.

Inventor： Yoshitaka Nishihara ,  Koji Kamei

IPC: H01L21/02 ,  H01L21/66 ,  C30B29/00 ,  G01N21/64 ,  G01N21/95 ,  G01N21/84

Abstract: An evaluation method of a SiC epitaxial wafer includes: a first observation step of preparing a SiC epitaxial wafer having a high-concentration epitaxial layer having an impurity concentration of 1×1018 cm−3 or more, irradiating a surface of the high-concentration epitaxial layer having an impurity concentration of 1×1018 cm−3 or more with excitation light, and observing a surface irradiated with the excitation light via a band-pass filter having a wavelength band of 430 nm or less.

公开(公告)号：US10697898B2

公开(公告)日：2020-06-30

申请号：US16598486

申请日：2019-10-10

Applicant: SHOWA DENKO K.K.

Inventor： Yoshitaka Nishihara ,  Koji Kamei

IPC: G01N21/88 ,  H01L29/16

Abstract: In a SiC substrate evaluation method, a bar-shaped stacking fault is observed by irradiating a surface of a SiC substrate before stacking an epitaxial layer with excitation light and extracting light having a wavelength range from equal to or greater than 405 nm and equal to or less than 445 nm among photoluminescence light beams emitted from the first surface.

公开(公告)号：US11961736B2

公开(公告)日：2024-04-16

申请号：US17683176

申请日：2022-02-28

Applicant: SHOWA DENKO K.K.

Inventor： Ling Guo ,  Koji Kamei

IPC: C23C16/32 ,  C30B25/20 ,  C30B29/36 ,  G01N21/95 ,  G06T7/00 ,  H01L21/02 ,  H01L21/66 ,  H01L29/16 ,  H01L29/32

CPC classification number: H01L21/02378 ,  C23C16/325 ,  C30B25/20 ,  C30B29/36 ,  G01N21/9505 ,  G06T7/0004 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/02634 ,  H01L22/12 ,  H01L29/1608 ,  H01L29/32 ,  G06T2207/10056 ,  G06T2207/30148

Abstract: A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H-SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm2, wherein a total density of large pit defects and triangular defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.01 defects/cm2 or more and 0.6 defects/cm2 or less. The large pit defect is a pit located on a surface at a position corresponding to a position of the carbon inclusion on the substrate surface, and a conversion rate from the substrate carbon inclusions to the large pit defects and the triangular defects caused by the substrate carbon inclusions is 20% or less. Also disclosed is a method for producing the SiC epitaxial wafer.

公开(公告)号：US11320388B2

公开(公告)日：2022-05-03

申请号：US16327445

申请日：2017-08-21

Applicant: SHOWA DENKO K.K.

Inventor： Ling Guo ,  Koji Kamei

IPC: C30B25/18 ,  G01N21/95 ,  C23C16/32 ,  C30B25/20 ,  C30B29/36

Abstract: A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H—SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm2, and wherein a density of large pit defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.5 defects/cm2 or less.

公开(公告)号：US11293115B2

公开(公告)日：2022-04-05

申请号：US16325281

申请日：2017-08-21

Applicant: SHOWA DENKO K.K.

Inventor： Ling Guo ,  Koji Kamei

IPC: C30B25/18 ,  C30B29/36 ,  C30B25/20 ,  C23C16/32 ,  G01N21/95 ,  G06T7/00 ,  H01L29/16 ,  H01L21/02 ,  H01L21/66 ,  H01L29/32

Abstract: A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H-SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 2.5 inclusions/cm2, wherein a total density of large pit defects and triangular defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.6 defects/cm2 or less.