Methods, circuits, and systems for reading memory cells are described. The method may include: applying a first voltage with a first polarity to a plurality of the memory cells; applying a second voltage with a second polarity to one or more of said plurality of the memory cells; applying at least a third voltage with the first polarity to one or more of said plurality of the memory cells; detecting electrical responses of memory cells to the first voltage, the second voltage, and the third voltage; and determining a logic state of respective memory cells based on the electrical responses of the memory cells to the first voltage, the second voltage, and the third voltage.