Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16718211Application Date: 2019-12-18
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Publication No.: US11302600B2Publication Date: 2022-04-12
- Inventor: Wensen Hung , Ping-Kang Huang , Sao-Ling Chiu , Tsung-Shu Lin , Tsung-Yu Chen , Chien-Yuan Huang , Chen-Hsiang Lao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L21/48 ; H01L25/065 ; H01L25/00 ; H01L23/42

Abstract:
A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a lid and outer flanges. The lid overlies the semiconductor package. The outer flanges are disposed at edges of the lid, are connected with the lid, extend from the lid towards the circuit substrate, and face side surfaces of the semiconductor package. The lid has a first region that is located over the semiconductor package and is thicker than a second region that is located outside a footprint of the semiconductor package.
Public/Granted literature
- US20210193550A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-06-24
Information query
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