Invention Grant
- Patent Title: Method of improving read current stability in analog non-volatile memory by program adjustment for memory cells exhibiting random telegraph noise
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Application No.: US16915289Application Date: 2020-06-29
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Publication No.: US11309042B2Publication Date: 2022-04-19
- Inventor: Viktor Markov , Alexander Kotov
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP (US)
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/34 ; G11C16/14 ; G11C16/26 ; G11C16/10 ; G11C16/04

Abstract:
A method and device for programming a non-volatile memory cell, where the non-volatile memory cell includes a first gate. The non-volatile memory cell is programmed to an initial program state that corresponds to meeting or exceeding a target threshold voltage for the first gate of the non-volatile memory cell. The target threshold voltage corresponds to a target read current. The non-volatile memory cell is read in a first read operation using a read voltage applied to the first gate of the non-volatile memory cell that is less than the target threshold voltage to generate a first read current. The non-volatile memory cell is subjected to additional programming in response to determining that the first read current is greater than the target read current.
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