Invention Grant
- Patent Title: Magnetoresistive random access memory with larger alignment window and method of manufacturing the same
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Application No.: US16719992Application Date: 2019-12-19
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Publication No.: US11309486B2Publication Date: 2022-04-19
- Inventor: Hung-Chan Lin , Yu-Ping Wang , Hung-Yueh Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201810076594.2 20180126
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/02 ; H01L27/22 ; H01L43/12
Abstract:
A magnetoresistive random access memory (MRAM) is provided in the present invention, including a conductive plug with a protruding portion extending outwardly on one side and a notched portion concaving inwardly on the other side of the upper edge of conductive plug, and a memory cell with a bottom electrode electrically connecting with the conductive plug, a magnetic tunnel junction (MTJ) on the bottom electrode, and a top electrode on the magnetic tunnel junction, wherein the bottom surface of memory cell completely overlaps the top surface of conductive plug.
Information query
IPC分类:
