- Patent Title: Integrated assemblies and methods of forming integrated assemblies
-
Application No.: US16902897Application Date: 2020-06-16
-
Publication No.: US11329064B2Publication Date: 2022-05-10
- Inventor: Ramey M. Abdelrahaman , Jeslin J. Wu , Chandra Tiwari , Kunal Shrotri , Swapnil Lengade
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11524 ; H01L27/11556 ; H01L27/1157 ; H01L21/02 ; H01L21/3115 ; H01L21/311
Abstract:
Some embodiments include an integrated assembly having a vertical stack of alternating insulative levels and conductive levels. The insulative levels have a same primary composition as one another. At least one of the insulative levels is compositionally different relative to others of the insulative levels due to said at least one of the insulative levels including dopant dispersed within the primary composition. An opening extends vertically through the stack. Some embodiments include methods of forming integrated assemblies.
Public/Granted literature
- US20210391352A1 Integrated Assemblies and Methods of Forming Integrated Assemblies Public/Granted day:2021-12-16
Information query
IPC分类:
