- 专利标题： Pattern-forming method, and composition
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申请号： US16940589申请日： 2020-07-28
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公开(公告)号： US11335559B2公开(公告)日： 2022-05-17
- 发明人: Hiroyuki Komatsu , Tomohiro Oda , Masafumi Hori , Takehiko Naruoka , Tomoki Nagai
- 申请人： JSR CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： JSR CORPORATION
- 当前专利权人： JSR CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JPJP2016-022287 20160208
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; H01L21/308 ; H01L21/3065 ; H01L21/768 ; C08L53/00 ; C08F212/08 ; C08F293/00 ; C08F12/08 ; C08F20/14 ; G03F7/038 ; G03F7/039 ; G03F7/16 ; G03F7/20 ; G03F7/32
摘要：
A pattern-forming method includes: forming a pattern on an upper face side of a substrate; applying a first composition to a sidewall of the pattern; forming a resin layer by applying a second composition to an inner face side of the sidewall of the pattern coated with the first composition; allowing the resin layer to separate into a plurality of phases; and removing at least one of the plurality of phases. The first composition contains a first polymer. The second composition contains a second polymer. The second polymer includes a first block having a first structural unit and a second block having a second structural unit. The polarity of the second structural unit is higher than the polarity of the first structural unit. Immediately before forming of the resin layer, a static contact angle θ (°) of water on the sidewall of the pattern satisfies inequality (1). α ≥ θ ≥ α + β 2 ( 1 )