Invention Grant
- Patent Title: Integrated circuits having cross-couple constructs and semiconductor devices including integrated circuits
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Application No.: US16191720Application Date: 2018-11-15
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Publication No.: US11335673B2Publication Date: 2022-05-17
- Inventor: Jung-Ho Do , Dal-Hee Lee , Jin-Young Lim , Tae-Joong Song , Jong-Hoon Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2017-0178738 20171222
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/118 ; G11C5/06 ; G06F30/00 ; G11C8/16 ; G11C11/412 ; H01L21/768 ; H01L27/088

Abstract:
An integrated circuit may include a first active region and a second active region, and the first and second active regions may extend on a substrate in a first horizontal direction in parallel to each other and have different conductivity types from each other. A first gate line may extend in a second horizontal direction crossing the first horizontal direction, and may form a first transistor with the first active region. The first transistor may include a gate to which a first input signal is applied. The first gate line may include a first partial gate line that overlaps the first active region in a perpendicular direction and that has an end on a region between the first and second active regions.
Public/Granted literature
Information query
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