公开(公告)号：US11335673B2

公开(公告)日：2022-05-17

申请号：US16191720

申请日：2018-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Ho Do ,  Dal-Hee Lee ,  Jin-Young Lim ,  Tae-Joong Song ,  Jong-Hoon Jung

IPC: H01L27/02 ,  H01L27/118 ,  G11C5/06 ,  G06F30/00 ,  G11C8/16 ,  G11C11/412 ,  H01L21/768 ,  H01L27/088

Abstract: An integrated circuit may include a first active region and a second active region, and the first and second active regions may extend on a substrate in a first horizontal direction in parallel to each other and have different conductivity types from each other. A first gate line may extend in a second horizontal direction crossing the first horizontal direction, and may form a first transistor with the first active region. The first transistor may include a gate to which a first input signal is applied. The first gate line may include a first partial gate line that overlaps the first active region in a perpendicular direction and that has an end on a region between the first and second active regions.

公开(公告)号：US10990740B2

公开(公告)日：2021-04-27

申请号：US16378751

申请日：2019-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Tae Kim ,  Sung-We Cho ,  Tae-Joong Song ,  Seung-Young Lee ,  Jin-Young Lim

IPC: G06F30/392 ,  H01L27/02 ,  G06F30/394 ,  G06F30/398

Abstract: An integrated circuit may include a first standard cell including first and second active regions extending in a first horizontal direction and a first gate line extending in a second horizontal direction orthogonal to the first horizontal direction; and a second standard cell including third and fourth active regions extending in the first horizontal direction and a second gate line aligned in parallel to the first gate in the second horizontal direction and being adjacent to the first standard cell. A distance between the second active region of the first standard cell and the third active region of the second standard cell may be greater than a distance between the first and second active regions of the first standard cell, and may be greater than a distance between the third and fourth active regions of the second standard cell.

公开(公告)号：US11955471B2

公开(公告)日：2024-04-09

申请号：US17584930

申请日：2022-01-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Ho Do ,  Dal-Hee Lee ,  Jin-Young Lim ,  Tae-Joong Song ,  Jong-Hoon Jung

IPC: H01L27/02 ,  G06F30/00 ,  G11C5/06 ,  G11C8/16 ,  G11C11/412 ,  H01L21/768 ,  H01L27/088 ,  H01L27/118

CPC classification number: H01L27/0207 ,  G06F30/00 ,  G11C5/063 ,  G11C8/16 ,  G11C11/412 ,  H01L21/76895 ,  H01L27/088 ,  H01L27/11807 ,  H01L2027/11875

Abstract: An integrated circuit may include a first active region and a second active region, and the first and second active regions may extend on a substrate in a first horizontal direction in parallel to each other and have different conductivity types from each other. A first gate line may extend in a second horizontal direction crossing the first horizontal direction, and may form a first transistor with the first active region. The first transistor may include a gate to which a first input signal is applied. The first gate line may include a first partial gate line that overlaps the first active region in a perpendicular direction and that has an end on a region between the first and second active regions.

公开(公告)号：US20200050728A1

公开(公告)日：2020-02-13

申请号：US16378751

申请日：2019-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： JIN-TAE KIM ,  Sung-We Cho ,  Tae-Joong Song ,  Seung-Young Lee ,  Jin-Young Lim

IPC: G06F17/50 ,  H01L27/02

Abstract: An integrated circuit may include a first standard cell including first and second active regions extending in a first horizontal direction and a first gate line extending in a second horizontal direction orthogonal to the first horizontal direction; and a second standard cell including third and fourth active regions extending in the first horizontal direction and a second gate line aligned in parallel to the first gate in the second horizontal direction and being adjacent to the first standard cell. A distance between the second active region of the first standard cell and the third active region of the second standard cell may be greater than a distance between the first and second active regions of the first standard cell, and may be greater than a distance between the third and fourth active regions of the second standard cell.

公开(公告)号：US20220149032A1

公开(公告)日：2022-05-12

申请号：US17584930

申请日：2022-01-26

Applicant: Samsung Electronics, Co., Ltd.

Inventor： Jung-Ho Do ,  Dal-Hee Lee ,  Jin-Young Lim ,  Tae-Joong Song ,  Jong-Hoon Jung

IPC: H01L27/02 ,  H01L27/118 ,  G11C5/06 ,  G06F30/00 ,  G11C8/16 ,  G11C11/412 ,  H01L21/768 ,  H01L27/088

Abstract: An integrated circuit may include a first active region and a second active region, and the first and second active regions may extend on a substrate in a first horizontal direction in parallel to each other and have different conductivity types from each other. A first gate line may extend in a second horizontal direction crossing the first horizontal direction, and may form a first transistor with the first active region. The first transistor may include a gate to which a first input signal is applied. The first gate line may include a first partial gate line that overlaps the first active region in a perpendicular direction and that has an end on a region between the first and second active regions.

公开(公告)号：US20190198491A1

公开(公告)日：2019-06-27

申请号：US16191720

申请日：2018-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Ho Do ,  Dal-Hee Lee ,  Jin-Young Lim ,  Tae-Joong Song ,  Jong-Hoon Jung

IPC: H01L27/02 ,  H01L27/088 ,  H01L21/768 ,  G11C8/16 ,  G11C11/412

CPC classification number: H01L27/0207 ,  G11C8/16 ,  G11C11/412 ,  H01L21/76895 ,  H01L27/088

Abstract: An integrated circuit may include a first active region and a second active region, and the first and second active regions may extend on a substrate in a first horizontal direction in parallel to each other and have different conductivity types from each other. A first gate line may extend in a second horizontal direction crossing the first horizontal direction, and may form a first transistor with the first active region. The first transistor may include a gate to which a first input signal is applied. The first gate line may include a first partial gate line that overlaps the first active region in a perpendicular direction and that has an end on a region between the first and second active regions.