Invention Grant
- Patent Title: Lens structure configured to increase quantum efficiency of image sensor
-
Application No.: US16804208Application Date: 2020-02-28
-
Publication No.: US11335726B2Publication Date: 2022-05-17
- Inventor: Jiech-Fun Lu , Chun-Tsung Kuo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/341

Abstract:
Various embodiments of the present disclosure are directed towards an image sensor having a substrate including a plurality of sidewalls that define a plurality of protrusions along a first side of the substrate. The substrate has a first index of refraction. A photodetector is disposed within the substrate and underlying the plurality of protrusions. A plurality of micro-lenses overlying the first side of the substrate. The micro-lenses have a second index of refraction that is less than the first index of refraction. The micro-lenses are respectively disposed laterally between and directly contact an adjacent pair of protrusions in the plurality of protrusions. Further, the micro-lenses respectively comprise a convex upper surface.
Public/Granted literature
- US20210134875A1 LENS STRUCTURE CONFIGURED TO INCREASE QUANTUM EFFICIENCY OF IMAGE SENSOR Public/Granted day:2021-05-06
Information query
IPC分类: