公开(公告)号：US11869761B2

公开(公告)日：2024-01-09

申请号：US17017854

申请日：2020-09-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hung Cheng ,  Chun-Tsung Kuo ,  Jiech-Fun Lu ,  Min-Ying Tsai ,  Chiao-Chun Hsu ,  Ching I Li

IPC: H01L27/146 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L27/1463 ,  H01L21/02057 ,  H01L21/30604 ,  H01L27/1469 ,  H01L27/14634 ,  H01L27/14683 ,  H01L27/14698 ,  H01L27/1464 ,  H01L27/14636

Abstract: The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensing die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer.

公开(公告)号：US11183587B2

公开(公告)日：2021-11-23

申请号：US16924545

申请日：2020-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Tsung Kuo ,  Jiech-Fun Lu

IPC: H01L29/737 ,  H01L29/66 ,  H01L29/165 ,  H01L21/311 ,  H01L21/02 ,  H01L29/08 ,  H01L21/033 ,  H01L29/10

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a bipolar junction transistor (BJT). A dielectric film is deposited over a substrate and comprises a lower dielectric layer, an upper dielectric layer, and an intermediate dielectric layer between the lower and upper dielectric layers. A first semiconductor layer is deposited over the dielectric film and is subsequently patterned to form an opening exposing the dielectric film. A first etch is performed into the upper dielectric layer through the opening to extend the opening to the intermediate dielectric layer. Further, the first etch stops on the intermediate dielectric layer and laterally undercuts the first semiconductor layer. Additional etches are performed to extend the opening to the substrate. A lower base structure and an emitter are formed stacked in and filling the opening, and the first semiconductor layer is patterned to form an upper base structure.

公开(公告)号：US10170601B2

公开(公告)日：2019-01-01

申请号：US15697150

申请日：2017-09-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Tsung Kuo ,  Chuan-Feng Chen

IPC: H01L21/70 ,  H01L29/732 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/16 ,  H01L29/10

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a collector element formed in or over a semiconductor substrate. The semiconductor device structure also includes a semiconductor element over the collector element, and the semiconductor element has a top surface, a bottom surface, and a side surface. The semiconductor device structure further includes an emitter element over the top surface of the semiconductor element. In addition, the semiconductor device structure includes a base element over the collector element and in direct contact with the side surface of the semiconductor element.

公开(公告)号：US11335726B2

公开(公告)日：2022-05-17

申请号：US16804208

申请日：2020-02-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jiech-Fun Lu ,  Chun-Tsung Kuo

IPC: H01L27/146 ,  H04N5/341

Abstract: Various embodiments of the present disclosure are directed towards an image sensor having a substrate including a plurality of sidewalls that define a plurality of protrusions along a first side of the substrate. The substrate has a first index of refraction. A photodetector is disposed within the substrate and underlying the plurality of protrusions. A plurality of micro-lenses overlying the first side of the substrate. The micro-lenses have a second index of refraction that is less than the first index of refraction. The micro-lenses are respectively disposed laterally between and directly contact an adjacent pair of protrusions in the plurality of protrusions. Further, the micro-lenses respectively comprise a convex upper surface.

公开(公告)号：US20210335861A1

公开(公告)日：2021-10-28

申请号：US17017854

申请日：2020-09-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hung Cheng ,  Chun-Tsung Kuo ,  Jiech-Fun Lu ,  Min-Ying Tsai ,  Chiao-Chun Hsu ,  Ching I Li

IPC: H01L27/146

Abstract: The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensing die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer.

公开(公告)号：US20210134988A1

公开(公告)日：2021-05-06

申请号：US16924545

申请日：2020-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Tsung Kuo ,  Jiech-Fun Lu

IPC: H01L29/737 ,  H01L29/66 ,  H01L29/165 ,  H01L21/311 ,  H01L29/10 ,  H01L29/08 ,  H01L21/033 ,  H01L21/02

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a bipolar junction transistor (BJT). A dielectric film is deposited over a substrate and comprises a lower dielectric layer, an upper dielectric layer, and an intermediate dielectric layer between the lower and upper dielectric layers. A first semiconductor layer is deposited over the dielectric film and is subsequently patterned to form an opening exposing the dielectric film. A first etch is performed into the upper dielectric layer through the opening to extend the opening to the intermediate dielectric layer. Further, the first etch stops on the intermediate dielectric layer and laterally undercuts the first semiconductor layer. Additional etches are performed to extend the opening to the substrate. A lower base structure and an emitter are formed stacked in and filling the opening, and the first semiconductor layer is patterned to form an upper base structure.

公开(公告)号：US11233117B2

公开(公告)日：2022-01-25

申请号：US16789839

申请日：2020-02-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Tsung Kuo ,  Jiech-Fun Lu

IPC: H01L49/02 ,  H01L21/768

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a resistor structure. A resistive layer overlies a substrate. The resistor structure overlies the substrate. The resistor structure includes a resistor segment of the resistive layer and conductive via structures overlying the resistor segment. A ring structure encloses the resistor structure. The ring structure extends continuously from a first point above the conductive structures to a second point below a bottom surface of the resistive layer.

公开(公告)号：US11133374B2

公开(公告)日：2021-09-28

申请号：US16665894

申请日：2019-10-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yen-Shuo Su ,  Chun-Tsung Kuo ,  Jiech-Fun Lu

IPC: H01L49/02 ,  H01F17/00 ,  H01F41/04

Abstract: A method includes depositing a magnetic layer over a dielectric layer, and etching a first portion of the magnetic layer, in which a second portion of the magnetic layer that is directly under the first portion of the magnetic layer remains over the dielectric layer after etching the first portion of the magnetic layer. The second portion of the magnetic layer is etched.

公开(公告)号：US20210134940A1

公开(公告)日：2021-05-06

申请号：US16789839

申请日：2020-02-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Tsung Kuo ,  Jiech-Fun Lu

IPC: H01L49/02 ,  H01L21/768

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a resistor structure. A resistive layer overlies a substrate. The resistor structure overlies the substrate. The resistor structure includes a resistor segment of the resistive layer and conductive via structures overlying the resistor segment. A ring structure encloses the resistor structure. The ring structure extends continuously from a first point above the conductive structures to a second point below a bottom surface of the resistive layer.

公开(公告)号：US20210134875A1

公开(公告)日：2021-05-06

申请号：US16804208

申请日：2020-02-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jiech-Fun Lu ,  Chun-Tsung Kuo

IPC: H01L27/146

Abstract: Various embodiments of the present disclosure are directed towards an image sensor having a substrate including a plurality of sidewalls that define a plurality of protrusions along a first side of the substrate. The substrate has a first index of refraction. A photodetector is disposed within the substrate and underlying the plurality of protrusions. A plurality of micro-lenses overlying the first side of the substrate. The micro-lenses have a second index of refraction that is less than the first index of refraction. The micro-lenses are respectively disposed laterally between and directly contact an adjacent pair of protrusions in the plurality of protrusions. Further, the micro-lenses respectively comprise a convex upper surface.