Invention Grant
- Patent Title: Vanadium dioxide heterostructures having an isostructural metal-insulator transition
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Application No.: US15591454Application Date: 2017-05-10
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Publication No.: US11335781B2Publication Date: 2022-05-17
- Inventor: Chang-Beom Eom , Daesu Lee
- Applicant: Wisconsin Alumni Research Foundation
- Applicant Address: US WI Madison
- Assignee: Wisconsin Alumni Research Foundation
- Current Assignee: Wisconsin Alumni Research Foundation
- Current Assignee Address: US WI Madison
- Agency: Bell & Manning, LLC
- Agent Michelle Manning
- Main IPC: H01L29/24
- IPC: H01L29/24 ; H01L45/00 ; H01L29/45 ; H01L29/94 ; H01L29/861 ; H01L29/786 ; H03K17/687 ; H01L49/00

Abstract:
Heterostructures that include a bilayer composed of epitaxial layers of vanadium dioxide having different rutile-to-monoclinic phase transition temperatures are provided. Also provided are electrical switches that incorporate the heterostructures. The bilayers are characterized in that they undergo a single-step, collective, metal-insulator transition at an electronic transition temperature. At temperatures below the electronic transition temperature, the layer of vanadium dioxide having the higher rutile-to-monoclinic phase transition temperature has an insulating monoclinic crystalline phase, which is converted to a metallic monoclinic crystalline phase at temperatures above the electronic transition temperature.
Public/Granted literature
- US20180331188A1 VANADIUM DIOXIDE HETEROSTRUCTURES HAVING AN ISOSTRUCTURAL METAL-INSULATOR TRANSITION Public/Granted day:2018-11-15
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