Invention Grant
- Patent Title: Methods for manufacturing semiconductor device
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Application No.: US16858826Application Date: 2020-04-27
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Publication No.: US11335827B2Publication Date: 2022-05-17
- Inventor: Kai Cheng , Tsau-Hua Hsieh , Fang-Ying Lin , Tung-Kai Liu , Hui-Chieh Wang , Chun-Hsien Lin , Jui-Feng Ko
- Applicant: InnoLux Corporation
- Applicant Address: TW Miao-Li County
- Assignee: InnoLux Corporation
- Current Assignee: InnoLux Corporation
- Current Assignee Address: TW Miao-Li County
- Agency: McClure, Qualey & Rodack, LLP
- Priority: CN201810178352.4 20180305
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/62 ; H01L25/075 ; H01L25/16 ; H01L33/32

Abstract:
A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of light-emitting elements on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of light-emitting elements from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of light-emitting elements from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of light-emitting elements from the third substrate to the fourth substrate. The pitch between the plurality of light-emitting elements on the first substrate is different than the pitch of the first pattern array.
Public/Granted literature
- US20200259044A1 METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2020-08-13
Information query
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