Invention Grant
- Patent Title: Free-form dual dual-conductor integrated radio frequency media
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Application No.: US16695695Application Date: 2019-11-26
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Publication No.: US11342647B2Publication Date: 2022-05-24
- Inventor: David D. Heston , Mikel J. White , Michael G. Hawkins
- Applicant: RAYTHEON COMPANY
- Applicant Address: US MA Waltham
- Assignee: RAYTHEON COMPANY
- Current Assignee: RAYTHEON COMPANY
- Current Assignee Address: US MA Waltham
- Agency: Cantor Colburn LLP
- Main IPC: H01P3/08
- IPC: H01P3/08 ; H01P1/203 ; H01P11/00

Abstract:
A free-from radio frequency (RF) media includes a substrate having a first dielectric layer formed thereon and a second dielectric layer on an upper surface of the first dielectric layer. A first conductive layer is formed on an upper surface of the first dielectric layer and has a first overall profile. A second conductive layer having a second overall profile is formed on an upper surface of the second dielectric layer such that the second dielectric layer is interposed between the first and second conductive layers. The first overall profile of the first conductive layer is different from the second overall profile of the second conductive layer.
Public/Granted literature
- US20210159578A1 FREE-FORM DUAL DUAL-CONDUCTOR INTEGRATED RADIO FREQUENCY MEDIA Public/Granted day:2021-05-27
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