公开(公告)号：US20210159578A1

公开(公告)日：2021-05-27

申请号：US16695695

申请日：2019-11-26

Applicant: RAYTHEON COMPANY

Inventor： David D. Heston ,  Mikel J. White ,  Michael G. Hawkins

IPC: H01P3/08 ,  H01P11/00

Abstract: A free-from radio frequency (RF) media includes a substrate having a first dielectric layer formed thereon and a second dielectric layer on an upper surface of the first dielectric layer. A first conductive layer is formed on an upper surface of the first dielectric layer and has a first overall profile. A second conductive layer having a second overall profile is formed on an upper surface of the second dielectric layer such that the second dielectric layer is interposed between the first and second conductive layers. The first overall profile of the first conductive layer is different from the second overall profile of the second conductive layer.

公开(公告)号：US11342647B2

公开(公告)日：2022-05-24

申请号：US16695695

申请日：2019-11-26

Applicant: RAYTHEON COMPANY

Inventor： David D. Heston ,  Mikel J. White ,  Michael G. Hawkins

IPC: H01P3/08 ,  H01P1/203 ,  H01P11/00

Abstract: A free-from radio frequency (RF) media includes a substrate having a first dielectric layer formed thereon and a second dielectric layer on an upper surface of the first dielectric layer. A first conductive layer is formed on an upper surface of the first dielectric layer and has a first overall profile. A second conductive layer having a second overall profile is formed on an upper surface of the second dielectric layer such that the second dielectric layer is interposed between the first and second conductive layers. The first overall profile of the first conductive layer is different from the second overall profile of the second conductive layer.

公开(公告)号：US09548730B1

公开(公告)日：2017-01-17

申请号：US15010316

申请日：2016-01-29

Applicant: Raytheon Company

Inventor： Brian P. Helm ,  Michael G. Hawkins

IPC: H03K17/0412 ,  H03K17/687 ,  H01L27/06

CPC classification number: H03K17/04123 ,  H01L27/0629 ,  H01L27/088 ,  H03K17/102 ,  H03K2017/6875

Abstract: In order to increase the switching speed of an RF FET in an RF shunt circuit, a second, smaller, FET, with respect to the size of the RF FET, is connected directly to the gate of the RF FET to shunt the gate to ground quickly when switched from the off-state to the on-state. The smaller FET switches faster, due to being smaller than the larger RF FET, but it is effectively open-circuited in terms of RF performance when off because it is so small.

Abstract translation: 为了提高RF分流电路中RF FET的开关速度，相对于RF FET的尺寸，第二个较小的FET直接连接到RF FET的栅极，以将栅极分流到地 当从关闭状态切换到开状态时，快速。 较小的FET开关由于小于较大的RF FET而更快，但是由于它非常小，因此在关闭时可以有效地开放RF性能。

公开(公告)号：US09450568B1

公开(公告)日：2016-09-20

申请号：US14866096

申请日：2015-09-25

Applicant: Raytheon Company

Inventor： Michael G. Hawkins ,  David D. Heston

IPC: G05F1/10 ,  G05F3/02 ,  H03K3/011 ,  H03K17/687

CPC classification number: G05F3/02 ,  H03K17/162

Abstract: A bias circuit includes second order process variation compensation in a current source topology having a compensation transistor operating in saturation mode as a current source. An additional compensation transistor is biased to operate in a linear mode to provide an active resistor to vary a control voltage applied to the saturation mode compensation transistor and widen the range of sourced control current, thus widening the achievable range of the control voltage applied to the biasing transistor to produce a predetermined level of bias current despite process variations. The additional compensation transistor has been shown to be able to compensate for another approximately 20-25% of the induced variations leaving less than approximately 10% and preferably less than 5% variation in the bias current from the predetermined level at certain bias conditions and over typical fabrication process variations.

Abstract translation: 偏置电路包括具有以饱和模式工作的补偿晶体管作为电流源的电流源拓扑中的二阶工艺变化补偿。 附加的补偿晶体管被偏置以在线性模式下工作以提供有源电阻器以改变施加到饱和模式补偿晶体管的控制电压并且扩大源极控制电流的范围，从而加宽施加到所述饱和模式补偿晶体管的控制电压的可实现范围 偏置晶体管，以产生预定水平的偏置电流，尽管过程变化。 附加补偿晶体管已经被证明能够补偿另外约20-25％的诱导变化，在某些偏压条件下，偏置电流偏离预定电平的偏差电流小于约10％，优选小于5％ 典型的制造工艺变化。