Invention Grant
- Patent Title: Methods for device fabrication using pitch reduction
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Application No.: US16692440Application Date: 2019-11-22
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Publication No.: US11348788B2Publication Date: 2022-05-31
- Inventor: Luan C. Tran , Raghupathy Giridhar
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L27/105 ; H01L21/033 ; H01L21/3213 ; H01L21/311
Abstract:
Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided.
Public/Granted literature
- US20200090929A1 METHODS FOR DEVICE FABRICATION USING PITCH REDUCTION Public/Granted day:2020-03-19
Information query
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