公开(公告)号：US20150170905A1

公开(公告)日：2015-06-18

申请号：US14635023

申请日：2015-03-02

Applicant: Micron Technology, Inc.

Inventor： Luan C. Tran ,  Raghupathy Giridhar

IPC: H01L21/027 ,  H01L21/311 ,  H01L27/105 ,  H01L21/033

CPC classification number: H01L21/0274 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/32139 ,  H01L27/105 ,  H01L27/1052

Abstract: Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided.

Abstract translation: 用于通过反向间距减小流程进行器件制造的方法的实施例包括在形成第一特征图案之后形成衬底上方的特征的第一图案并形成间距倍数间隔物的第二图案。 在本发明的实施例中，可以通过光刻形成第一特征图案，并且可以通过间距倍增形成间距倍增间隔物的第二图案。 提供了其他用于器件制造的方法。

公开(公告)号：US10522348B2

公开(公告)日：2019-12-31

申请号：US16249369

申请日：2019-01-16

Applicant: Micron Technology, Inc.

Inventor： Luan C. Tran ,  Raghupathy Giridhar

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/3213 ,  H01L27/105 ,  H01L21/311

Abstract: Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided.

公开(公告)号：US11348788B2

公开(公告)日：2022-05-31

申请号：US16692440

申请日：2019-11-22

Applicant: Micron Technology, Inc.

Inventor： Luan C. Tran ,  Raghupathy Giridhar

IPC: H01L21/027 ,  H01L27/105 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/311

Abstract: Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided.

公开(公告)号：US20200090929A1

公开(公告)日：2020-03-19

申请号：US16692440

申请日：2019-11-22

Applicant: Micron Technology, Inc.

Inventor： Luan C. Tran ,  Raghupathy Giridhar

IPC: H01L21/027 ,  H01L21/033 ,  H01L27/105 ,  H01L21/3213 ,  H01L21/311

Abstract: Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided.

公开(公告)号：US20220262626A1

公开(公告)日：2022-08-18

申请号：US17662160

申请日：2022-05-05

Applicant: Micron Technology, Inc.

Inventor： Luan C. Tran ,  Raghupathy Giridhar

IPC: H01L21/027 ,  H01L21/033 ,  H01L27/105 ,  H01L21/3213 ,  H01L21/311

Abstract: Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided.

公开(公告)号：US20190148135A1

公开(公告)日：2019-05-16

申请号：US16249369

申请日：2019-01-16

Applicant: Micron Technology, Inc.

Inventor： Luan C. Tran ,  Raghupathy Giridhar

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/033 ,  H01L27/105 ,  H01L21/3213

Abstract: Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided.