Invention Grant
- Patent Title: Isolation structure for for isolating epitaxially grown source/drain regions and method of fabrication thereof
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Application No.: US17033031Application Date: 2020-09-25
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Publication No.: US11349002B2Publication Date: 2022-05-31
- Inventor: Ta-Chun Lin , Kuan-Lin Yeh , Chun-Jun Lin , Kuo-Hua Pan , Mu-Chi Chiang , Jhon Jhy Liaw
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/08 ; H01L29/78 ; H01L29/06
Abstract:
A first source/drain structure is disposed over a substrate. A second source/drain structure is disposed over the substrate. An isolation structure is disposed between the first source/drain structure and the second source/drain structure. The first source/drain structure and a first sidewall of the isolation structure form a first interface that is substantially linear. The second source/drain structure and a second sidewall of the isolation structure form a second interface that is substantially linear. A first source/drain contact surrounds the first source/drain structure in multiple directions. A second source/drain contact surrounds the second source/drain structure in multiple directions. The isolation structure is disposed between the first source/drain contact and the second source/drain contact.
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