公开(公告)号：US11349002B2

公开(公告)日：2022-05-31

申请号：US17033031

申请日：2020-09-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ta-Chun Lin ,  Kuan-Lin Yeh ,  Chun-Jun Lin ,  Kuo-Hua Pan ,  Mu-Chi Chiang ,  Jhon Jhy Liaw

IPC分类号： H01L29/417 ,  H01L29/08 ,  H01L29/78 ,  H01L29/06

摘要： A first source/drain structure is disposed over a substrate. A second source/drain structure is disposed over the substrate. An isolation structure is disposed between the first source/drain structure and the second source/drain structure. The first source/drain structure and a first sidewall of the isolation structure form a first interface that is substantially linear. The second source/drain structure and a second sidewall of the isolation structure form a second interface that is substantially linear. A first source/drain contact surrounds the first source/drain structure in multiple directions. A second source/drain contact surrounds the second source/drain structure in multiple directions. The isolation structure is disposed between the first source/drain contact and the second source/drain contact.

公开(公告)号：US11990525B2

公开(公告)日：2024-05-21

申请号：US17826816

申请日：2022-05-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ta-Chun Lin ,  Kuan-Lin Yeh ,  Chun-Jun Lin ,  Kuo-Hua Pan ,  Mu-Chi Chiang ,  Jhon Jhy Liaw

IPC分类号： H01L29/417 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78

CPC分类号： H01L29/41791 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/785 ,  H01L2029/7858

摘要： A first source/drain structure is disposed over a substrate. A second source/drain structure is disposed over the substrate. An isolation structure is disposed between the first source/drain structure and the second source/drain structure. The first source/drain structure and a first sidewall of the isolation structure form a first interface that is substantially linear. The second source/drain structure and a second sidewall of the isolation structure form a second interface that is substantially linear. A first source/drain contact surrounds the first source/drain structure in multiple directions. A second source/drain contact surrounds the second source/drain structure in multiple directions. The isolation structure is disposed between the first source/drain contact and the second source/drain contact.

公开(公告)号：US11749683B2

公开(公告)日：2023-09-05

申请号：US17728243

申请日：2022-04-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ta-Chun Lin ,  Kuan-Lin Yeh ,  Chun-Jun Lin ,  Kuo-Hua Pan ,  Mu-Chi Chiang

IPC分类号： H10B10/00 ,  H01L27/092 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/762 ,  H01L21/768

CPC分类号： H01L27/0924 ,  H01L21/762 ,  H01L21/76831 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823878 ,  H01L29/0649 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66795 ,  H01L29/7851 ,  H10B10/12

摘要： A semiconductor device includes a first active region and a second active region disposed over a substrate. A first source/drain component is grown on the first active region. A second source/drain component is grown on the second active region. An interlayer dielectric (ILD) is disposed around the first source/drain component and the second source/drain component. An isolation structure extends vertically through the ILD. The isolation structure separates the first source/drain component from the second source/drain component.

公开(公告)号：US20220293752A1

公开(公告)日：2022-09-15

申请号：US17826816

申请日：2022-05-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ta-Chun Lin ,  Kuan-Lin Yeh ,  Chun-Jun Lin ,  Kuo-Hua Pan ,  Mu-Chi Chiang ,  Jhon Jhy Liaw

IPC分类号： H01L29/417 ,  H01L29/08 ,  H01L29/78 ,  H01L29/06

摘要： A first source/drain structure is disposed over a substrate. A second source/drain structure is disposed over the substrate. An isolation structure is disposed between the first source/drain structure and the second source/drain structure. The first source/drain structure and a first sidewall of the isolation structure form a first interface that is substantially linear. The second source/drain structure and a second sidewall of the isolation structure form a second interface that is substantially linear. A first source/drain contact surrounds the first source/drain structure in multiple directions. A second source/drain contact surrounds the second source/drain structure in multiple directions. The isolation structure is disposed between the first source/drain contact and the second source/drain contact.

公开(公告)号：US20220246613A1

公开(公告)日：2022-08-04

申请号：US17728243

申请日：2022-04-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ta-Chun Lin ,  Kuan-Lin Yeh ,  Chun-Jun Lin ,  Kuo-Hua Pan ,  Mu-Chi Chiang

IPC分类号： H01L27/092 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/762 ,  H01L21/768

摘要： A semiconductor device includes a first active region and a second active region disposed over a substrate. A first source/drain component is grown on the first active region. A second source/drain component is grown on the second active region. An interlayer dielectric (ILD) is disposed around the first source/drain component and the second source/drain component. An isolation structure extends vertically through the ILD. The isolation structure separates the first source/drain component from the second source/drain component.

公开(公告)号：US20230361124A1

公开(公告)日：2023-11-09

申请号：US18355143

申请日：2023-07-19

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ta-Chun Lin ,  Kuan-Lin Yeh ,  Chun-Jun Lin ,  Kuo-Hua Pan ,  Mu-Chi Chiang

IPC分类号： H01L27/092 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/762 ,  H01L21/768 ,  H10B10/00

CPC分类号： H01L27/0924 ,  H01L29/7851 ,  H01L29/0649 ,  H01L29/66545 ,  H01L29/66553 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L21/823842 ,  H01L21/762 ,  H01L21/76831 ,  H01L29/66795 ,  H10B10/12

摘要： A semiconductor device includes a first active region and a second active region disposed over a substrate. A first source/drain component is grown on the first active region. A second source/drain component is grown on the second active region. An interlayer dielectric (ILD) is disposed around the first source/drain component and the second source/drain component. An isolation structure extends vertically through the ILD. The isolation structure separates the first source/drain component from the second source/drain component.

公开(公告)号：US11315924B2

公开(公告)日：2022-04-26

申请号：US16917778

申请日：2020-06-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ta-Chun Lin ,  Kuan-Lin Yeh ,  Chun-Jun Lin ,  Kuo-Hua Pan ,  Mu-Chi Chiang

IPC分类号： H01L27/092 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/762 ,  H01L21/768

摘要： A semiconductor device includes a first active region and a second active region disposed over a substrate. A first source/drain component is grown on the first active region. A second source/drain component is grown on the second active region. An interlayer dielectric (ILD) is disposed around the first source/drain component and the second source/drain component. An isolation structure extends vertically through the ILD. The isolation structure separates the first source/drain component from the second source/drain component.

公开(公告)号：US20220102509A1

公开(公告)日：2022-03-31

申请号：US17033031

申请日：2020-09-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ta-Chun Lin ,  Kuan-Lin Yeh ,  Chun-Jun Lin ,  Kuo-Hua Pan ,  Mu-Chi Chiang ,  Jhon Jhy Liaw

IPC分类号： H01L29/417 ,  H01L29/08 ,  H01L29/06 ,  H01L29/78

摘要： A first source/drain structure is disposed over a substrate. A second source/drain structure is disposed over the substrate. An isolation structure is disposed between the first source/drain structure and the second source/drain structure. The first source/drain structure and a first sidewall of the isolation structure form a first interface that is substantially linear. The second source/drain structure and a second sidewall of the isolation structure form a second interface that is substantially linear. A first source/drain contact surrounds the first source/drain structure in multiple directions. A second source/drain contact surrounds the second source/drain structure in multiple directions. The isolation structure is disposed between the first source/drain contact and the second source/drain contact.

公开(公告)号：US20210408000A1

公开(公告)日：2021-12-30

申请号：US16917778

申请日：2020-06-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ta-Chun Lin ,  Kuan-Lin Yeh ,  Chun-Jun Lin ,  Kuo-Hua Pan ,  Mu-Chi Chiang

IPC分类号： H01L27/092 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/762 ,  H01L21/768

摘要： A semiconductor device includes a first active region and a second active region disposed over a substrate. A first source/drain component is grown on the first active region. A second source/drain component is grown on the second active region. An interlayer dielectric (ILD) is disposed around the first source/drain component and the second source/drain component. An isolation structure extends vertically through the ILD. The isolation structure separates the first source/drain component from the second source/drain component.