Invention Grant
- Patent Title: Semiconductor device and method
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Application No.: US16917306Application Date: 2020-06-30
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Publication No.: US11355637B2Publication Date: 2022-06-07
- Inventor: Ching-Feng Fu , Guan-Ren Wang , Yun-Min Chang , Yu-Lien Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L21/768 ; H01L21/8234 ; H01L29/66
Abstract:
A semiconductor device and method of manufacture are provided which help to support contacts while material is removed to form air gaps. In embodiments a contact is formed with an enlarged base to help support overlying portions of the contact. In other embodiments a scaffold material may also be placed prior to the formation of the air gaps in order to provide additional support.
Public/Granted literature
- US20210408276A1 Semiconductor Device and Method Public/Granted day:2021-12-30
Information query
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