公开(公告)号：US12211937B2

公开(公告)日：2025-01-28

申请号：US18344176

申请日：2023-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Feng Fu ,  Guan-Ren Wang ,  Yun-Min Chang ,  Yu-Lien Huang

IPC: H01L29/78 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/66

Abstract: A semiconductor device and method of manufacture are provided which help to support contacts while material is removed to form air gaps. In embodiments a contact is formed with an enlarged base to help support overlying portions of the contact. In other embodiments a scaffold material may also be placed prior to the formation of the air gaps in order to provide additional support.

公开(公告)号：US11355637B2

公开(公告)日：2022-06-07

申请号：US16917306

申请日：2020-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Feng Fu ,  Guan-Ren Wang ,  Yun-Min Chang ,  Yu-Lien Huang

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/66

Abstract: A semiconductor device and method of manufacture are provided which help to support contacts while material is removed to form air gaps. In embodiments a contact is formed with an enlarged base to help support overlying portions of the contact. In other embodiments a scaffold material may also be placed prior to the formation of the air gaps in order to provide additional support.

公开(公告)号：US20240006534A1

公开(公告)日：2024-01-04

申请号：US18344176

申请日：2023-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Feng Fu ,  Guan-Ren Wang ,  Yun-Min Chang ,  Yu-Lien Huang

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L29/0649 ,  H01L21/7682 ,  H01L21/823431 ,  H01L29/66795 ,  H01L2029/7858

Abstract: A semiconductor device and method of manufacture are provided which help to support contacts while material is removed to form air gaps. In embodiments a contact is formed with an enlarged base to help support overlying portions of the contact. In other embodiments a scaffold material may also be placed prior to the formation of the air gaps in order to provide additional support.

公开(公告)号：US11715777B2

公开(公告)日：2023-08-01

申请号：US16887219

申请日：2020-05-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Guan-Ren Wang ,  Yun-Min Chang ,  Yu-Lien Huang ,  Ching-Feng Fu

IPC: H01L21/8234 ,  H01L29/78 ,  H01L27/088 ,  H01L29/423

CPC classification number: H01L29/42372 ,  H01L21/823418 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/785

Abstract: A semiconductor device including source/drain contacts extending into source/drain regions, below topmost surfaces of the source/drain regions, and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate; a first channel region over the semiconductor substrate; a first gate stack over the semiconductor substrate and surrounding four sides of the first channel region; a first epitaxial source/drain region adjacent the first gate stack and the first channel region; and a first source/drain contact coupled to the first epitaxial source/drain region, a bottommost surface of the first source/drain contact extending below a topmost surface of the first channel region.

公开(公告)号：US20220302298A1

公开(公告)日：2022-09-22

申请号：US17832930

申请日：2022-06-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Feng Fu ,  Guan-Ren Wang ,  Yun-Min Chang ,  Yu-Lien Huang

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/66

Abstract: A semiconductor device and method of manufacture are provided which help to support contacts while material is removed to form air gaps. In embodiments a contact is formed with an enlarged base to help support overlying portions of the contact. In other embodiments a scaffold material may also be placed prior to the formation of the air gaps in order to provide additional support.

公开(公告)号：US11916147B2

公开(公告)日：2024-02-27

申请号：US17852899

申请日：2022-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Lien Huang ,  Guan-Ren Wang ,  Ching-Feng Fu ,  Yun-Min Chang

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L29/165 ,  H01L29/66 ,  H01L21/223 ,  H01L21/265 ,  H01L21/266 ,  H01L29/08

CPC classification number: H01L29/7851 ,  H01L21/0217 ,  H01L21/31116 ,  H01L21/32139 ,  H01L21/7682 ,  H01L21/76802 ,  H01L21/76877 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7853 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/2236 ,  H01L21/266 ,  H01L21/26513 ,  H01L29/0847 ,  H01L29/6656 ,  H01L29/66636

Abstract: A method of forming a semiconductor device includes: forming a gate structure over a fin that protrudes above a substrate; forming source/drain regions over the fin on opposing sides of the gate structure; forming a first dielectric layer and a second dielectric layer successively over the source/drain regions; performing a first etching process to form an opening in the first dielectric layer and in the second dielectric layer, where the opening exposes an underlying electrically conductive feature; after performing the first etching process, performing a second etching process to enlarge a lower portion of the opening proximate to the substrate; and forming a contact plug in the opening after the second etching process.

公开(公告)号：US20220359693A1

公开(公告)日：2022-11-10

申请号：US17814725

申请日：2022-07-25

Applicant: Taiwan Semiconductor Manufacturing Co.,Ltd.

Inventor： Guan-Ren Wang ,  Yun-Min Chang ,  Yu-Lien Huang ,  Ching-Feng Fu

IPC: H01L29/423 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78

Abstract: A semiconductor device including source/drain contacts extending into source/drain regions, below topmost surfaces of the source/drain regions, and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate; a first channel region over the semiconductor substrate; a first gate stack over the semiconductor substrate and surrounding four sides of the first channel region; a first epitaxial source/drain region adjacent the first gate stack and the first channel region; and a first source/drain contact coupled to the first epitaxial source/drain region, a bottommost surface of the first source/drain contact extending below a topmost surface of the first channel region.

公开(公告)号：US11735667B2

公开(公告)日：2023-08-22

申请号：US17832930

申请日：2022-06-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Feng Fu ,  Guan-Ren Wang ,  Yun-Min Chang ,  Yu-Lien Huang

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L21/7682 ,  H01L21/823431 ,  H01L29/0649 ,  H01L29/66795 ,  H01L2029/7858

Abstract: A semiconductor device and method of manufacture are provided which help to support contacts while material is removed to form air gaps. In embodiments a contact is formed with an enlarged base to help support overlying portions of the contact. In other embodiments a scaffold material may also be placed prior to the formation of the air gaps in order to provide additional support.

公开(公告)号：US20210376101A1

公开(公告)日：2021-12-02

申请号：US16887219

申请日：2020-05-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Guan-Ren Wang ,  Yun-Min Chang ,  Yu-Lien Huang ,  Ching-Feng Fu

IPC: H01L29/423 ,  H01L21/8234 ,  H01L29/78 ,  H01L27/088

Abstract: A semiconductor device including source/drain contacts extending into source/drain regions, below topmost surfaces of the source/drain regions, and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate; a first channel region over the semiconductor substrate; a first gate stack over the semiconductor substrate and surrounding four sides of the first channel region; a first epitaxial source/drain region adjacent the first gate stack and the first channel region; and a first source/drain contact coupled to the first epitaxial source/drain region, a bottommost surface of the first source/drain contact extending below a topmost surface of the first channel region.

公开(公告)号：US20250120113A1

公开(公告)日：2025-04-10

申请号：US18983802

申请日：2024-12-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Feng Fu ,  Guan-Ren Wang ,  Yun-Min Chang ,  Yu-Lien Huang

IPC: H01L29/78 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/66

Abstract: A semiconductor device and method of manufacture are provided which help to support contacts while material is removed to form air gaps. In embodiments a contact is formed with an enlarged base to help support overlying portions of the contact. In other embodiments a scaffold material may also be placed prior to the formation of the air gaps in order to provide additional support.